Etching of uranium oxide with a non-thermal, atmospheric pressure plasma
نویسندگان
چکیده
The etching of uranium oxide films was investigated with a non-thermal, atmospheric pressure plasma fed with a mixture of 2.0 kPa carbon tetrafluoride, 880.0 Pa oxygen and 97.2 kPa helium. Etching rates of up to 4.0 lm/min were recorded at a 200 C sample temperature. X-ray photoemission spectroscopy revealed that the etched surface was highly fluorinated, containing UOF4 species during the etching process. An average surface reaction rate was estimated to be 1.9· 10 UF6 molecules/m s. 2003 Elsevier B.V. All rights reserved.
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